IPD65R1K4CFDBTMA1 PDF Produktark Last ned - MOSFET N-CH 650V 2.8A TO-252

spesifikasjoner for IPD65R1K4CFDBTMA1

Delenummer : IPD65R1K4CFDBTMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 650V 2.8A TO-252

Serie : CoolMOS™

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 650V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 1.4 Ohm @ 1A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 100µA

Gate Lading (Qg) (Max) @ Vgs : 10nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 262pF @ 100V

FET-funksjon : -

Effektdissipasjon (maks) : 28.4W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-TO252-3

Pakke / sak : TO-252-3, DPak (2 Leads + Tab), SC-63

Vekt : -

Betingelse : Nytt og originalt

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Produsentens varenummer

IPD65R1K4CFDBTMA1

Intern delenummer

AX-IPD65R1K4CFDBTMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 650V 2.8A TO-252

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

915615 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IPD65R1K4CFDBTMA1 på lager for selger.

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IPD65R1K4CFDBTMA1 Datablad

spesifikasjoner for IPD65R1K4CFDBTMA1

Relaterte produkter IPD65R1K4CFDBTMA1 Infineon Technologies