spesifikasjoner for RN2110MFV,L3F

Delenummer : RN2110MFV,L3F
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : X34 PB-F VESM TRANSISTOR PD 150M
Serie : -
Delstatus : Active
Transistortype : PNP - Pre-Biased
Nåværende - Samler (Ic) (Maks) : 100mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 4.7 kOhms
Motstand - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) : 100nA (ICBO)
Frekvens - overgang : -
Kraft - Maks : 150mW
Monteringstype : Surface Mount
Pakke / sak : SOT-723
Leverandørenhetspakke : VESM
Vekt : -
Betingelse : Nytt og originalt
Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Produsentens varenummer
Intern delenummer
Kort beskrivelse
X34 PB-F VESM TRANSISTOR PD 150M
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
14844670 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har RN2110MFV,L3F på lager for selger.
Frakt alternativer og shipping tid:
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FEDEX: 2-3 days.
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TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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