IXTM67N10 - POWER MOSFET TO-3

Produsentens varenummer

IXTM67N10

Intern delenummer

AX-IXTM67N10

Produsent

IXYS

Kort beskrivelse

POWER MOSFET TO-3

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

22701 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IXTM67N10 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IXTM67N10

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IXTM67N10

Produsent : IXYS

Beskrivelse : POWER MOSFET TO-3

Serie : GigaMOS™

Delstatus : Last Time Buy

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 25 mOhm @ 33.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 4mA

Gate Lading (Qg) (Max) @ Vgs : 260nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4500pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 300W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : TO-204AE

Pakke / sak : TO-204AE

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IXT , IXTM

dokumenter for IXTM67N10

Dataark : IXTM67N10.pdf

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