SI1315DL-T1-GE3 - MOSFET P-CH 8V 0.9A SC70-3

Produsentens varenummer

SI1315DL-T1-GE3

Intern delenummer

AX-SI1315DL-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET P-CH 8V 0.9A SC70-3

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

22128 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SI1315DL-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SI1315DL-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SI1315DL-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET P-CH 8V 0.9A SC70-3

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 8V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 900mA (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, vgs : 336 mOhm @ 800mA, 4.5V

Vgs (th) (Max) @ Id : 800mV @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 3.4nC @ 4.5V

Vgs (maks) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 112pF @ 4V

FET-funksjon : -

Effektdissipasjon (maks) : 300mW (Ta), 400mW (Tc)

Driftstemperatur : -50°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : SOT-323

Pakke / sak : SC-70, SOT-323

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SI131 , SI1315D

dokumenter for SI1315DL-T1-GE3

Dataark : SI1315DL-T1-GE3.pdf

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