SI5515CDC-T1-GE3 - MOSFET N/P-CH 20V 4A 1206-8
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N/P-CH 20V 4A 1206-8
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
1313680 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har SI5515CDC-T1-GE3 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for SI5515CDC-T1-GE3
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
SI5515CDC-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N/P-CH 20V 4A 1206-8
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N and P-Channel
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, vgs :
36 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
632pF @ 10V
Kraft - Maks :
3.1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SMD, Flat Lead
Leverandørenhetspakke :
1206-8 ChipFET™
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for SI5515CDC-T1-GE3
Dataark :
SI5515CDC-T1-GE3.pdf
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