DMJ70H900HJ3 - MOSFET BVDSS 651V 800V TO251

Produsentens varenummer

DMJ70H900HJ3

Intern delenummer

AX-DMJ70H900HJ3

Produsent

Diodes Incorporated

Kort beskrivelse

MOSFET BVDSS 651V 800V TO251

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

323020 Pieces

Reference Pris

~~USD 0.86856~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har DMJ70H900HJ3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for DMJ70H900HJ3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : DMJ70H900HJ3

Produsent : Diodes Incorporated

Beskrivelse : MOSFET BVDSS 651V 800V TO251

Serie : Automotive, AEC-Q101

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 700V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 900 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 18.4nC @ 10V

Vgs (maks) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 603pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 68W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : TO-251

Pakke / sak : TO-251-3, IPak, Short Leads

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : DMJ7 , DMJ70H

dokumenter for DMJ70H900HJ3

Dataark : DMJ70H900HJ3.pdf

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