IRF7492PBF - MOSFET N-CH 200V 3.7A 8-SOIC
Produsentens varenummer
Intern delenummer
AX-IRF7492PBF
Produsent
Kort beskrivelse
MOSFET N-CH 200V 3.7A 8-SOIC
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
5304 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har IRF7492PBF på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for IRF7492PBF
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
IRF7492PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 200V 3.7A 8-SOIC
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
79 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1820pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for IRF7492PBF
Dataark :
IRF7492PBF.pdf
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