IRFHM830TR2PBF - MOSFET N-CH 30V 21A PQFN

Produsentens varenummer

IRFHM830TR2PBF

Intern delenummer

AX-IRFHM830TR2PBF

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 30V 21A PQFN

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

10824 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IRFHM830TR2PBF på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IRFHM830TR2PBF

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IRFHM830TR2PBF

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 30V 21A PQFN

Serie : HEXFET®

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 21A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 3.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 50µA

Gate Lading (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2155pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 2.7W (Ta), 37W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PQFN (3x3)

Pakke / sak : 8-VQFN Exposed Pad

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IRFH , IRFHM83

dokumenter for IRFHM830TR2PBF

Dataark : IRFHM830TR2PBF.pdf

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