SIHB33N60EF-GE3 - MOSFET N-CH 600V 33A TO-263

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 600V 33A TO-263
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
63100 Pieces
Reference Pris
USD 4.446
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har SIHB33N60EF-GE3 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for SIHB33N60EF-GE3

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : SIHB33N60EF-GE3
Produsent : Vishay Siliconix
Beskrivelse : MOSFET N-CH 600V 33A TO-263
Serie : -
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 98 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 155nC @ 10V
Vgs (maks) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3454pF @ 100V
FET-funksjon : -
Effektdissipasjon (maks) : 278W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : D²PAK (TO-263)
Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : SIHB3 , SIHB33N

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