SI3473DDV-T1-GE3 - MOSFET P-CHANNEL 12V 8A 6TSOP
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET P-CHANNEL 12V 8A 6TSOP
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
2931330 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har SI3473DDV-T1-GE3 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for SI3473DDV-T1-GE3
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
SI3473DDV-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CHANNEL 12V 8A 6TSOP
Serie :
TrenchFET® Gen III
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
12V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
17.8 mOhm @ 8.7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
57nC @ 8V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1975pF @ 6V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.6W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
6-TSOP
Pakke / sak :
SOT-23-6 Thin, TSOT-23-6
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for SI3473DDV-T1-GE3
Dataark :
SI3473DDV-T1-GE3.pdf
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