1N5407GHB0G - DIODE GEN PURP 800V 3A DO201AD

Produsentens varenummer

1N5407GHB0G

Intern delenummer

AX-1N5407GHB0G

Produsent

Taiwan Semiconductor Corporation

Kort beskrivelse

DIODE GEN PURP 800V 3A DO201AD

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

5730470 Pieces

Reference Pris

~~USD 0.04896~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har 1N5407GHB0G på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for 1N5407GHB0G

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : 1N5407GHB0G

Produsent : Taiwan Semiconductor Corporation

Beskrivelse : DIODE GEN PURP 800V 3A DO201AD

Serie : Automotive, AEC-Q101

Delstatus : Active

Diodetype : Standard

Spenning - DC Reverse (Vr) (Max) : 800V

Nåværende - Gjennomsnittlig rettet (Io) : 3A

Spenning - Fremover (Vf) (Maks) @ Hvis : 1V @ 3A

Hastighet : Standard Recovery >500ns, > 200mA (Io)

Omvendt gjenopprettingstid (trr) : -

Nåværende - Omvendt lekkasje @ Vr : 5µA @ 800V

Capacitance @ Vr, F : 25pF @ 4V, 1MHz

Monteringstype : Through Hole

Pakke / sak : DO-201AD, Axial

Leverandørenhetspakke : DO-201AD

Driftstemperatur - veikryss : -55°C ~ 150°C

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : 1N5 , 1N540

dokumenter for 1N5407GHB0G

Dataark : 1N5407GHB0G.pdf

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