TPN2010FNH,L1Q - MOSFET N-CH 250V 5.6A 8TSON

Produsentens varenummer

TPN2010FNH,L1Q

Intern delenummer

AX-TPN2010FNH,L1Q

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 250V 5.6A 8TSON

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

734075 Pieces

Reference Pris

~~USD 0.3822~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har TPN2010FNH,L1Q på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TPN2010FNH,L1Q

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TPN2010FNH,L1Q

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 250V 5.6A 8TSON

Serie : U-MOSVIII-H

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 250V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 198 mOhm @ 2.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 200µA

Gate Lading (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V

FET-funksjon : -

Effektdissipasjon (maks) : 700mW (Ta), 39W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-TSON Advance (3.3x3.3)

Pakke / sak : 8-PowerVDFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TPN2 , TPN2010

dokumenter for TPN2010FNH,L1Q

Dataark : TPN2010FNH,L1Q.pdf

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