EPC2016C - GANFET TRANS 100V 18A BUMPED DIE

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
GANFET TRANS 100V 18A BUMPED DIE
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
445330 Pieces
Reference Pris
USD 0.63
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har EPC2016C på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for EPC2016C

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : EPC2016C
Produsent : EPC
Beskrivelse : GANFET TRANS 100V 18A BUMPED DIE
Serie : eGaN®
Delstatus : Active
FET Type : N-Channel
Teknologi : GaNFET (Gallium Nitride)
Drenering til kildespenning (Vdss) : 100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, vgs : 16 mOhm @ 11A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 3mA
Gate Lading (Qg) (Max) @ Vgs : 4.5nC @ 5V
Vgs (maks) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 50V
FET-funksjon : -
Effektdissipasjon (maks) : -
Driftstemperatur : -40°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : Die
Pakke / sak : Die
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : EP , EPC2

dokumenter for EPC2016C

Dataark : EPC2016C.pdf

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