SI3900DV-T1-GE3 - MOSFET 2N-CH 20V 2A 6-TSOP

Produsentens varenummer

SI3900DV-T1-GE3

Intern delenummer

AX-SI3900DV-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET 2N-CH 20V 2A 6-TSOP

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

1018300 Pieces

Reference Pris

~~USD 0.27552~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SI3900DV-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SI3900DV-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SI3900DV-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 20V 2A 6-TSOP

Serie : TrenchFET®

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Logic Level Gate

Drenering til kildespenning (Vdss) : 20V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 2A

Rds On (Max) @ Id, vgs : 125 mOhm @ 2.4A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : -

Kraft - Maks : 830mW

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : SOT-23-6 Thin, TSOT-23-6

Leverandørenhetspakke : 6-TSOP

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SI390 , SI3900D

dokumenter for SI3900DV-T1-GE3

Dataark : SI3900DV-T1-GE3.pdf

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