EPC2107ENGRT - GAN TRANS 3N-CH 100V BUMPED DIE

Produsentens varenummer

EPC2107ENGRT

Intern delenummer

AX-EPC2107ENGRT

Produsent

EPC

Kort beskrivelse

GAN TRANS 3N-CH 100V BUMPED DIE

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

538710 Pieces

Reference Pris

~~USD 0.5208~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har EPC2107ENGRT på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for EPC2107ENGRT

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : EPC2107ENGRT

Produsent : EPC

Beskrivelse : GAN TRANS 3N-CH 100V BUMPED DIE

Serie : eGaN®

Delstatus : Active

FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)

FET-funksjon : GaNFET (Gallium Nitride)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 1.7A, 500mA

Rds On (Max) @ Id, vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA

Gate Lading (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V

Kraft - Maks : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 9-VFBGA

Leverandørenhetspakke : 9-BGA (1.35x1.35)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : EPC2 , EPC210

dokumenter for EPC2107ENGRT

Dataark : EPC2107ENGRT.pdf

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