SI2327DS-T1-E3 - MOSFET P-CH 200V 0.38A SOT23-3

Produsentens varenummer

SI2327DS-T1-E3

Intern delenummer

AX-SI2327DS-T1-E3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET P-CH 200V 0.38A SOT23-3

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

51438 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SI2327DS-T1-E3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spesifikasjoner for SI2327DS-T1-E3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SI2327DS-T1-E3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET P-CH 200V 0.38A SOT23-3

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 200V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 2.35 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 510pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 750mW (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : SOT-23-3 (TO-236)

Pakke / sak : TO-236-3, SC-59, SOT-23-3

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SI23 , SI2327D

dokumenter for SI2327DS-T1-E3

Dataark : SI2327DS-T1-E3.pdf

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