SIR412DP-T1-GE3 - MOSFET N-CH 25V 20A PPAK SO-8

Produsentens varenummer

SIR412DP-T1-GE3

Intern delenummer

AX-SIR412DP-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 25V 20A PPAK SO-8

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

63445 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SIR412DP-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SIR412DP-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SIR412DP-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N-CH 25V 20A PPAK SO-8

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 25V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 12 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V

FET-funksjon : -

Effektdissipasjon (maks) : 3.9W (Ta), 15.6W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PowerPAK® SO-8

Pakke / sak : PowerPAK® SO-8

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SIR41 , SIR412D

dokumenter for SIR412DP-T1-GE3

Dataark : SIR412DP-T1-GE3.pdf

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