RN1701JE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ESV
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
TRANS 2NPN PREBIAS 0.1W ESV
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
5301660 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har RN1701JE(TE85L,F) på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for RN1701JE(TE85L,F)
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
RN1701JE(TE85L,F)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS 2NPN PREBIAS 0.1W ESV
Serie :
-
Delstatus :
Active
Transistortype :
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Nåværende - Samler (Ic) (Maks) :
100mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
4.7 kOhms
Motstand - Emitter Base (R2) :
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) :
100nA (ICBO)
Frekvens - overgang :
250MHz
Kraft - Maks :
100mW
Monteringstype :
Surface Mount
Pakke / sak :
SOT-553
Leverandørenhetspakke :
ESV
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for RN1701JE(TE85L,F)
Dataark :
RN1701JE(TE85L,F).pdf
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