SCTH90N65G2V-7 - SILICON CARBIDE POWER MOSFET 650

Produsentens varenummer

SCTH90N65G2V-7

Intern delenummer

AX-SCTH90N65G2V-7

Produsent

STMicroelectronics

Kort beskrivelse

SILICON CARBIDE POWER MOSFET 650

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

15864 Pieces

Reference Pris

~~USD 28.2846~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SCTH90N65G2V-7 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SCTH90N65G2V-7

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SCTH90N65G2V-7

Produsent : STMicroelectronics

Beskrivelse : SILICON CARBIDE POWER MOSFET 650

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : SiCFET (Silicon Carbide)

Drenering til kildespenning (Vdss) : 650V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, vgs : 26 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 1mA

Gate Lading (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (maks) : +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 400V

FET-funksjon : -

Effektdissipasjon (maks) : 330W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : H2PAK-7

Pakke / sak : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SCTH , SCTH90N

dokumenter for SCTH90N65G2V-7

Dataark : SCTH90N65G2V-7.pdf

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