VS-GB50TP120N - IGBT 1200V 100A 446W INT-A-PAK

Produsentens varenummer
Intern delenummer
Kort beskrivelse
IGBT 1200V 100A 446W INT-A-PAK
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
10224 Pieces
Reference Pris
USD 43.873248
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har VS-GB50TP120N på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for VS-GB50TP120N

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : VS-GB50TP120N
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : IGBT 1200V 100A 446W INT-A-PAK
Serie : -
Delstatus : Active
IGBT-type : -
konfigurasjon : Half Bridge
Spenning - Samlebrenningens nedbrytning (maks) : 1200V
Nåværende - Samler (Ic) (Maks) : 100A
Kraft - Maks : 446W
Vce (på) (Max) @ Vge, Ic : 2.15V @ 15V, 50A
Nåværende - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 4.29nF @ 25V
Input : Standard
NTC Thermistor : No
Driftstemperatur : 150°C (TJ)
Monteringstype : Chassis Mount
Pakke / sak : INT-A-PAK (3 + 4)
Leverandørenhetspakke : INT-A-PAK
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : VS-G , VS-GB5

dokumenter for VS-GB50TP120N

Dataark : VS-GB50TP120N.pdf

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