IRLH5030TR2PBF - MOSFET N-CH 100V 13A 8PQFN

Produsentens varenummer

IRLH5030TR2PBF

Intern delenummer

AX-IRLH5030TR2PBF

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 100V 13A 8PQFN

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

66345 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IRLH5030TR2PBF på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IRLH5030TR2PBF

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IRLH5030TR2PBF

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 100V 13A 8PQFN

Serie : HEXFET®

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 13A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 9 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 150µA

Gate Lading (Qg) (Max) @ Vgs : 94nC @ 10V

Vgs (maks) : ±16V

Input Capacitance (Ciss) (Max) @ Vds : 5185pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 3.6W (Ta), 156W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PQFN (5x6) Single Die

Pakke / sak : 8-PowerVDFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IRLH , IRLH503

dokumenter for IRLH5030TR2PBF

Dataark : IRLH5030TR2PBF.pdf

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