SI5915BDC-T1-GE3 - MOSFET 2P-CH 8V 4A 1206-8

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET 2P-CH 8V 4A 1206-8
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
27839 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har SI5915BDC-T1-GE3 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
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spesifikasjoner for SI5915BDC-T1-GE3

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : SI5915BDC-T1-GE3
Produsent : Vishay Siliconix
Beskrivelse : MOSFET 2P-CH 8V 4A 1206-8
Serie : TrenchFET®
Delstatus : Obsolete
FET Type : 2 P-Channel (Dual)
FET-funksjon : Logic Level Gate
Drenering til kildespenning (Vdss) : 8V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 4A
Rds On (Max) @ Id, vgs : 70 mOhm @ 3.3A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 4V
Kraft - Maks : 3.1W
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Pakke / sak : 8-SMD, Flat Lead
Leverandørenhetspakke : 1206-8 ChipFET™
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : SI591 , SI5915BD

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