SISH410DN-T1-GE3 - MOSFET N-CHAN PPAK 1212-8SH

Produsentens varenummer

SISH410DN-T1-GE3

Intern delenummer

AX-SISH410DN-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHAN PPAK 1212-8SH

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

916800 Pieces

Reference Pris

~~USD 0.306024~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SISH410DN-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SISH410DN-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SISH410DN-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N-CHAN PPAK 1212-8SH

Serie : TrenchFET®

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 20V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 22A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 4.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V

FET-funksjon : -

Effektdissipasjon (maks) : 3.8W (Ta), 52W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PowerPAK® 1212-8SH

Pakke / sak : PowerPAK® 1212-8SH

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SISH4 , SISH410D

dokumenter for SISH410DN-T1-GE3

Dataark : SISH410DN-T1-GE3.pdf

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