BYV30JT-600PQ - DIODE GEN PURP 600V 30A TO-3P

Produsentens varenummer

BYV30JT-600PQ

Intern delenummer

AX-BYV30JT-600PQ

Produsent

WeEn Semiconductors

Kort beskrivelse

DIODE GEN PURP 600V 30A TO-3P

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

26565 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BYV30JT-600PQ på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BYV30JT-600PQ

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BYV30JT-600PQ

Produsent : WeEn Semiconductors

Beskrivelse : DIODE GEN PURP 600V 30A TO-3P

Serie : -

Delstatus : Active

Diodetype : Standard

Spenning - DC Reverse (Vr) (Max) : 600V

Nåværende - Gjennomsnittlig rettet (Io) : 30A

Spenning - Fremover (Vf) (Maks) @ Hvis : 1.8V @ 30A

Hastighet : Fast Recovery =< 500ns, > 200mA (Io)

Omvendt gjenopprettingstid (trr) : 65ns

Nåværende - Omvendt lekkasje @ Vr : 10µA @ 600V

Capacitance @ Vr, F : -

Monteringstype : Through Hole

Pakke / sak : TO-3P-3, SC-65-3

Leverandørenhetspakke : TO-3P

Driftstemperatur - veikryss : 175°C (Max)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BYV3 , BYV30J

dokumenter for BYV30JT-600PQ

Dataark : BYV30JT-600PQ.pdf

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