IPT65R105G7XTMA1 - HIGH POWERNEW
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
HIGH POWERNEW
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
144965 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har IPT65R105G7XTMA1 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for IPT65R105G7XTMA1
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
IPT65R105G7XTMA1
Produsent :
Infineon Technologies
Beskrivelse :
HIGH POWERNEW
Serie :
CoolMOS™ C7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
105 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 440µA
Gate Lading (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
156W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-HSOF-8-2
Pakke / sak :
8-PowerSFN
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for IPT65R105G7XTMA1
Dataark :
IPT65R105G7XTMA1.pdf
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