BSG0810NDIATMA1 - MOSFET 2N-CH 25V 19A/39A 8TISON

Produsentens varenummer

BSG0810NDIATMA1

Intern delenummer

AX-BSG0810NDIATMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET 2N-CH 25V 19A/39A 8TISON

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

417080 Pieces

Reference Pris

~~USD 0.672672~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BSG0810NDIATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BSG0810NDIATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BSG0810NDIATMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET 2N-CH 25V 19A/39A 8TISON

Serie : OptiMOS™

Delstatus : Active

FET Type : 2 N-Channel (Dual) Asymmetrical

FET-funksjon : Logic Level Gate, 4.5V Drive

Drenering til kildespenning (Vdss) : 25V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 19A, 39A

Rds On (Max) @ Id, vgs : 3 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 8.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 1040pF @ 12V

Kraft - Maks : 2.5W

Driftstemperatur : -55°C ~ 155°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-PowerTDFN

Leverandørenhetspakke : PG-TISON-8

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BSG08 , BSG0810

dokumenter for BSG0810NDIATMA1

Dataark : BSG0810NDIATMA1.pdf

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