PHD18NQ10T,118 - MOSFET N-CH 100V 18A DPAK

Produsentens varenummer

PHD18NQ10T,118

Intern delenummer

AX-PHD18NQ10T,118

Produsent

NXP USA Inc.

Kort beskrivelse

MOSFET N-CH 100V 18A DPAK

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

24619 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har PHD18NQ10T,118 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for PHD18NQ10T,118

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : PHD18NQ10T,118

Produsent : NXP USA Inc.

Beskrivelse : MOSFET N-CH 100V 18A DPAK

Serie : TrenchMOS™

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 90 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Lading (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 633pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 79W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : DPAK

Pakke / sak : TO-252-3, DPak (2 Leads + Tab), SC-63

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : PHD1 , PHD18NQ

dokumenter for PHD18NQ10T,118

Dataark : PHD18NQ10T,118.pdf

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