SI4900DY-T1-GE3 - MOSFET 2N-CH 60V 5.3A 8-SOIC
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
843440 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har SI4900DY-T1-GE3 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for SI4900DY-T1-GE3
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
SI4900DY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2N-CH 60V 5.3A 8-SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.3A
Rds On (Max) @ Id, vgs :
58 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
665pF @ 15V
Kraft - Maks :
3.1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke :
8-SO
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for SI4900DY-T1-GE3
Dataark :
SI4900DY-T1-GE3.pdf
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