SI4866DY-T1-GE3 - MOSFET N-CH 12V 11A 8-SOIC

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 12V 11A 8-SOIC
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
415520 Pieces
Reference Pris
USD 0.67521
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har SI4866DY-T1-GE3 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for SI4866DY-T1-GE3

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : SI4866DY-T1-GE3
Produsent : Vishay Siliconix
Beskrivelse : MOSFET N-CH 12V 11A 8-SOIC
Serie : TrenchFET®
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 12V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, vgs : 5.5 mOhm @ 17A, 4.5V
Vgs (th) (Max) @ Id : 600mV @ 250µA (Min)
Gate Lading (Qg) (Max) @ Vgs : 30nC @ 4.5V
Vgs (maks) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : -
FET-funksjon : -
Effektdissipasjon (maks) : 1.6W (Ta)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : 8-SO
Pakke / sak : 8-SOIC (0.154", 3.90mm Width)
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : SI486 , SI4866D

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