EPC2012C - GANFET TRANS 200V 5A BUMPED DIE
Produsentens varenummer
Intern delenummer
AX-EPC2012C
Produsent
Kort beskrivelse
GANFET TRANS 200V 5A BUMPED DIE
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
392940 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har EPC2012C på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for EPC2012C
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
EPC2012C
Produsent :
EPC
Beskrivelse :
GANFET TRANS 200V 5A BUMPED DIE
Serie :
eGaN®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
GaNFET (Gallium Nitride)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, vgs :
100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
1.3nC @ 5V
Vgs (maks) :
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
-
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
Die Outline (4-Solder Bar)
Pakke / sak :
Die
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for EPC2012C
Dataark :
EPC2012C.pdf
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