FQD2N80TF - MOSFET N-CH 800V 1.8A DPAK

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 800V 1.8A DPAK
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
70400 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har FQD2N80TF på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
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spesifikasjoner for FQD2N80TF

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : FQD2N80TF
Produsent : ON Semiconductor
Beskrivelse : MOSFET N-CH 800V 1.8A DPAK
Serie : QFET®
Delstatus : Obsolete
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 6.3 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (maks) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V
FET-funksjon : -
Effektdissipasjon (maks) : 2.5W (Ta), 50W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : D-Pak
Pakke / sak : TO-252-3, DPak (2 Leads + Tab), SC-63
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : FQD , FQD2

dokumenter for FQD2N80TF

Dataark : FQD2N80TF.pdf

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