SIZ200DT-T1-GE3 - MOSFET N-CH DUAL 30V

Produsentens varenummer

SIZ200DT-T1-GE3

Intern delenummer

AX-SIZ200DT-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH DUAL 30V

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

960015 Pieces

Reference Pris

~~USD 0.292248~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SIZ200DT-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SIZ200DT-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SIZ200DT-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N-CH DUAL 30V

Serie : TrenchFET® Gen IV

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Standard

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)

Rds On (Max) @ Id, vgs : 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 28nC @ 10V, 30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1510pF @ 15V, 1600pF @ 15V

Kraft - Maks : 4.3W (Ta), 33W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-PowerWDFN

Leverandørenhetspakke : 8-PowerPair® (3.3x3.3)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SIZ20 , SIZ200D

dokumenter for SIZ200DT-T1-GE3

Dataark : SIZ200DT-T1-GE3.pdf

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