IPDD60R102G7XTMA1 - MOSFET NCH 650V 66A PG-HDSOP-10

Produsentens varenummer

IPDD60R102G7XTMA1

Intern delenummer

AX-IPDD60R102G7XTMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET NCH 650V 66A PG-HDSOP-10

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

157865 Pieces

Reference Pris

~~USD 1.777128~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IPDD60R102G7XTMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IPDD60R102G7XTMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IPDD60R102G7XTMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET NCH 650V 66A PG-HDSOP-10

Serie : CoolMOS™ G7

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 600V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 102 mOhm @ 7.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 390µA

Gate Lading (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1320pF @ 400V

FET-funksjon : -

Effektdissipasjon (maks) : 139W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-HDSOP-10-1

Pakke / sak : 10-PowerSOP Module

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IPDD6 , IPDD60R1

dokumenter for IPDD60R102G7XTMA1

Dataark : IPDD60R102G7XTMA1.pdf

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