VS-GB100TH120N - IGBT 1200V 200A 833W INT-A-PAK
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
IGBT 1200V 200A 833W INT-A-PAK
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
9181 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har VS-GB100TH120N på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for VS-GB100TH120N
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
VS-GB100TH120N
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
IGBT 1200V 200A 833W INT-A-PAK
Serie :
-
Delstatus :
Active
IGBT-type :
-
konfigurasjon :
Half Bridge
Spenning - Samlebrenningens nedbrytning (maks) :
1200V
Nåværende - Samler (Ic) (Maks) :
200A
Kraft - Maks :
833W
Vce (på) (Max) @ Vge, Ic :
2.35V @ 15V, 100A
Nåværende - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
8.58nF @ 25V
Input :
Standard
NTC Thermistor :
No
Driftstemperatur :
150°C (TJ)
Monteringstype :
Chassis Mount
Pakke / sak :
Double INT-A-PAK (3 + 4)
Leverandørenhetspakke :
Double INT-A-PAK
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for VS-GB100TH120N
Dataark :
VS-GB100TH120N.pdf
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