BUK9E1R6-30E,127 - MOSFET N-CH 30V 120A I2PAK

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 30V 120A I2PAK
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
24745 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har BUK9E1R6-30E,127 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for BUK9E1R6-30E,127

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : BUK9E1R6-30E,127
Produsent : NXP USA Inc.
Beskrivelse : MOSFET N-CH 30V 120A I2PAK
Serie : TrenchMOS™
Delstatus : Obsolete
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, vgs : 1.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 1mA
Gate Lading (Qg) (Max) @ Vgs : 113nC @ 5V
Vgs (maks) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 16150pF @ 25V
FET-funksjon : -
Effektdissipasjon (maks) : 349W (Tc)
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Through Hole
Leverandørenhetspakke : I2PAK
Pakke / sak : TO-262-3 Long Leads, I²Pak, TO-262AA
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : BUK9E , BUK9E1R6

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