EGL34BHE3_A/I - DIODE GEN PURP 100V 500MA DO213

Produsentens varenummer

EGL34BHE3_A/I

Intern delenummer

AX-EGL34BHE3_A/I

Produsent

Vishay Semiconductor Diodes Division

Kort beskrivelse

DIODE GEN PURP 100V 500MA DO213

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

3661185 Pieces

Reference Pris

~~USD 0.076632~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har EGL34BHE3_A/I på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for EGL34BHE3_A/I

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : EGL34BHE3_A/I

Produsent : Vishay Semiconductor Diodes Division

Beskrivelse : DIODE GEN PURP 100V 500MA DO213

Serie : Automotive, AEC-Q101, Superectifier®

Delstatus : Active

Diodetype : Standard

Spenning - DC Reverse (Vr) (Max) : 100V

Nåværende - Gjennomsnittlig rettet (Io) : 500mA

Spenning - Fremover (Vf) (Maks) @ Hvis : 1.25V @ 500mA

Hastighet : Fast Recovery =< 500ns, > 200mA (Io)

Omvendt gjenopprettingstid (trr) : 50ns

Nåværende - Omvendt lekkasje @ Vr : 5µA @ 100V

Capacitance @ Vr, F : 7pF @ 4V, 1MHz

Monteringstype : Surface Mount

Pakke / sak : DO-213AA (Glass)

Leverandørenhetspakke : DO-213AA (GL34)

Driftstemperatur - veikryss : -65°C ~ 175°C

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : EGL3 , EGL34B

dokumenter for EGL34BHE3_A/I

Dataark : EGL34BHE3_A/I.pdf

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