NSB8DTHE3_A/I - DIODE GEN PURP 200V 8A TO263AB

Produsentens varenummer
Intern delenummer
Kort beskrivelse
DIODE GEN PURP 200V 8A TO263AB
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
522690 Pieces
Reference Pris
USD 0.53676
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har NSB8DTHE3_A/I på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for NSB8DTHE3_A/I

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : NSB8DTHE3_A/I
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 200V 8A TO263AB
Serie : Automotive, AEC-Q101
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 200V
Nåværende - Gjennomsnittlig rettet (Io) : 8A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.1V @ 8A
Hastighet : Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : -
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 200V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandørenhetspakke : TO-263AB
Driftstemperatur - veikryss : -55°C ~ 150°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : NSB8 , NSB8DT

dokumenter for NSB8DTHE3_A/I

Dataark : NSB8DTHE3_A/I.pdf

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