1N6622US - DIODE GEN PURP 660V 1.2A A-MELF

Produsentens varenummer
Intern delenummer
Kort beskrivelse
DIODE GEN PURP 660V 1.2A A-MELF
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
48870 Pieces
Reference Pris
USD 6.888
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har 1N6622US på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for 1N6622US

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : 1N6622US
Produsent : Microsemi Corporation
Beskrivelse : DIODE GEN PURP 660V 1.2A A-MELF
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 660V
Nåværende - Gjennomsnittlig rettet (Io) : 1.2A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.4V @ 1.2A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 30ns
Nåværende - Omvendt lekkasje @ Vr : 500nA @ 660V
Capacitance @ Vr, F : 10pF @ 10V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : SQ-MELF, A
Leverandørenhetspakke : A-MELF
Driftstemperatur - veikryss : -65°C ~ 150°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : 1N , 1N66

dokumenter for 1N6622US

Dataark : 1N6622US.pdf

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