IPD80N06S3-09 - MOSFET N-CH 55V 80A TO252-3

Produsentens varenummer
Intern delenummer
Kort beskrivelse
MOSFET N-CH 55V 80A TO252-3
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
8368 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har IPD80N06S3-09 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for IPD80N06S3-09

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : IPD80N06S3-09
Produsent : Infineon Technologies
Beskrivelse : MOSFET N-CH 55V 80A TO252-3
Serie : OptiMOS™
Delstatus : Obsolete
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 8.4 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 4V @ 55µA
Gate Lading (Qg) (Max) @ Vgs : 88nC @ 10V
Vgs (maks) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6100pF @ 25V
FET-funksjon : -
Effektdissipasjon (maks) : 107W (Tc)
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : PG-TO252-3
Pakke / sak : TO-252-3, DPak (2 Leads + Tab), SC-63
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : IPD8 , IPD80N

dokumenter for IPD80N06S3-09

Dataark : IPD80N06S3-09.pdf

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