IDB18E120ATMA1 - DIODE GEN PURP 1.2KV 31A TO263-3

Produsentens varenummer

IDB18E120ATMA1

Intern delenummer

AX-IDB18E120ATMA1

Produsent

Infineon Technologies

Kort beskrivelse

DIODE GEN PURP 1.2KV 31A TO263-3

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

13608 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IDB18E120ATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IDB18E120ATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IDB18E120ATMA1

Produsent : Infineon Technologies

Beskrivelse : DIODE GEN PURP 1.2KV 31A TO263-3

Serie : -

Delstatus : Obsolete

Diodetype : Standard

Spenning - DC Reverse (Vr) (Max) : 1200V

Nåværende - Gjennomsnittlig rettet (Io) : 31A (DC)

Spenning - Fremover (Vf) (Maks) @ Hvis : 2.15V @ 18A

Hastighet : Fast Recovery =< 500ns, > 200mA (Io)

Omvendt gjenopprettingstid (trr) : 195ns

Nåværende - Omvendt lekkasje @ Vr : 100µA @ 1200V

Capacitance @ Vr, F : -

Monteringstype : Surface Mount

Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Leverandørenhetspakke : PG-TO263-3

Driftstemperatur - veikryss : -55°C ~ 150°C

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IDB1 , IDB18E1

dokumenter for IDB18E120ATMA1

Dataark : IDB18E120ATMA1.pdf

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