K4B2G0846F-BYNB - 2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production

Produsentens varenummer

Intern delenummer

Produsent

Kort beskrivelse

2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

104120 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har K4B2G0846F-BYNB på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : K4B2G0846F-BYNB

Produsent : Samsung Semiconductor

Beskrivelse : 2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production

Serie : DDR3

tetthet : 2 Gb

Org. : 256M x 8

Hastighet : 2133 Mbps

Spenning : 1.35 V

Temp. : 0 ~ 85 °C

Pakke : 78FBGA

Product Status : Mass Production

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : K4B2G , K4B2G08

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