IPB019N08N3GATMA1 - MOSFET N-CH 80V 180A TO263-7
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 80V 180A TO263-7
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
141715 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har IPB019N08N3GATMA1 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for IPB019N08N3GATMA1
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
IPB019N08N3GATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 80V 180A TO263-7
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
1.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 270µA
Gate Lading (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
14200pF @ 40V
FET-funksjon :
-
Effektdissipasjon (maks) :
300W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-7
Pakke / sak :
TO-263-7, D²Pak (6 Leads + Tab)
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for IPB019N08N3GATMA1
Dataark :
IPB019N08N3GATMA1.pdf
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