BYM11-800HE3_A/I - DIODE GEN PURP 800V 1A DO213AB

Produsentens varenummer

BYM11-800HE3_A/I

Intern delenummer

AX-BYM11-800HE3_A/I

Produsent

Vishay Semiconductor Diodes Division

Kort beskrivelse

DIODE GEN PURP 800V 1A DO213AB

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

3885385 Pieces

Reference Pris

~~USD 0.07221~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BYM11-800HE3_A/I på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BYM11-800HE3_A/I

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BYM11-800HE3_A/I

Produsent : Vishay Semiconductor Diodes Division

Beskrivelse : DIODE GEN PURP 800V 1A DO213AB

Serie : Automotive, AEC-Q101, Superectifier®

Delstatus : Active

Diodetype : Standard

Spenning - DC Reverse (Vr) (Max) : 800V

Nåværende - Gjennomsnittlig rettet (Io) : 1A

Spenning - Fremover (Vf) (Maks) @ Hvis : 1.3V @ 1A

Hastighet : Fast Recovery =< 500ns, > 200mA (Io)

Omvendt gjenopprettingstid (trr) : 500ns

Nåværende - Omvendt lekkasje @ Vr : 5µA @ 800V

Capacitance @ Vr, F : 15pF @ 4V, 1MHz

Monteringstype : Surface Mount

Pakke / sak : DO-213AB, MELF (Glass)

Leverandørenhetspakke : DO-213AB

Driftstemperatur - veikryss : -65°C ~ 175°C

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BYM11 , BYM11-80

dokumenter for BYM11-800HE3_A/I

Dataark : BYM11-800HE3_A/I.pdf

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