NDBA180N10BT4H - MOSFET N-CH 100V 180A DPAK
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 100V 180A DPAK
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
21808 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har NDBA180N10BT4H på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for NDBA180N10BT4H
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
NDBA180N10BT4H
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 100V 180A DPAK
Serie :
-
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
180A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V, 15V
Rds On (Max) @ Id, vgs :
2.8 mOhm @ 50A, 15V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6950pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
200W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for NDBA180N10BT4H
Dataark :
NDBA180N10BT4H.pdf
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