SQV120N10-3M8_GE3 - MOSFET N-CH 100V 120A TO262-3

Produsentens varenummer

SQV120N10-3M8_GE3

Intern delenummer

AX-SQV120N10-3M8_GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 100V 120A TO262-3

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

225955 Pieces

Reference Pris

~~USD 1.24164~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SQV120N10-3M8_GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SQV120N10-3M8_GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SQV120N10-3M8_GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N-CH 100V 120A TO262-3

Serie : Automotive, AEC-Q101, TrenchFET®

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 3.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 190nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 7230pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 250W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : TO-262-3

Pakke / sak : TO-262-3 Long Leads, I²Pak, TO-262AA

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SQV12 , SQV120N1

dokumenter for SQV120N10-3M8_GE3

Dataark : SQV120N10-3M8_GE3.pdf

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