IPB025N10N3GE8187ATMA1 - MOSFET N-CH 100V 180A TO263-7

Produsentens varenummer

IPB025N10N3GE8187ATMA1

Intern delenummer

AX-IPB025N10N3GE8187ATMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 100V 180A TO263-7

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

143225 Pieces

Reference Pris

~~USD 1.95879~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IPB025N10N3GE8187ATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IPB025N10N3GE8187ATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IPB025N10N3GE8187ATMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 100V 180A TO263-7

Serie : OptiMOS™

Delstatus : Not For New Designs

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 180A

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 2.5 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 275µA

Gate Lading (Qg) (Max) @ Vgs : 206nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 14800pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 300W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-TO263-7

Pakke / sak : TO-263-7, D²Pak (6 Leads + Tab)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IPB025N , IPB025N10N3

dokumenter for IPB025N10N3GE8187ATMA1

Dataark : IPB025N10N3GE8187ATMA1.pdf

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