JAN1N5809URS - DIODE GEN PURP 100V 3A BPKG

Produsentens varenummer
Intern delenummer
Kort beskrivelse
DIODE GEN PURP 100V 3A BPKG
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
33621 Pieces
Reference Pris
USD 11.67936
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har JAN1N5809URS på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for JAN1N5809URS

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : JAN1N5809URS
Produsent : Microsemi Corporation
Beskrivelse : DIODE GEN PURP 100V 3A BPKG
Serie : Military, MIL-PRF-19500/477
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 100V
Nåværende - Gjennomsnittlig rettet (Io) : 3A
Spenning - Fremover (Vf) (Maks) @ Hvis : 875mV @ 4A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 30ns
Nåværende - Omvendt lekkasje @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : SQ-MELF, B
Leverandørenhetspakke : B, SQ-MELF
Driftstemperatur - veikryss : -65°C ~ 175°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : JAN1 , JAN1N5

dokumenter for JAN1N5809URS

Dataark : JAN1N5809URS.pdf

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