BSP296E6327 - MOSFET N-CH 100V 1.1A SOT223

Produsentens varenummer

BSP296E6327

Intern delenummer

AX-BSP296E6327

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 100V 1.1A SOT223

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

64635 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BSP296E6327 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BSP296E6327

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BSP296E6327

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 100V 1.1A SOT223

Serie : SIPMOS®

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 700 mOhm @ 1.1A, 10V

Vgs (th) (Max) @ Id : 1.8V @ 400µA

Gate Lading (Qg) (Max) @ Vgs : 17.2nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 364pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 1.79W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-SOT223-4

Pakke / sak : TO-261-4, TO-261AA

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BSP , BSP29

dokumenter for BSP296E6327

Dataark : BSP296E6327.pdf

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