1N6480HE3/97 - DIODE GEN PURP 200V 1A DO213AB

Produsentens varenummer
Intern delenummer
Kort beskrivelse
DIODE GEN PURP 200V 1A DO213AB
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
3523250 Pieces
Reference Pris
USD 0.079632
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har 1N6480HE3/97 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for 1N6480HE3/97

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : 1N6480HE3/97
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 200V 1A DO213AB
Serie : SUPERECTIFIER®
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 200V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.1V @ 1A
Hastighet : Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : -
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 200V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-213AB, MELF (Glass)
Leverandørenhetspakke : DO-213AB
Driftstemperatur - veikryss : -65°C ~ 175°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : 1N64 , 1N6480

dokumenter for 1N6480HE3/97

Dataark : 1N6480HE3/97.pdf

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