SI5511DC-T1-GE3 - MOSFET N/P-CH 30V 4A 1206-8

Produsentens varenummer

SI5511DC-T1-GE3

Intern delenummer

AX-SI5511DC-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N/P-CH 30V 4A 1206-8

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

29071 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SI5511DC-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SI5511DC-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SI5511DC-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N/P-CH 30V 4A 1206-8

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : N and P-Channel

FET-funksjon : Logic Level Gate

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 4A, 3.6A

Rds On (Max) @ Id, vgs : 55 mOhm @ 4.8A, 4.5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 7.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds : 435pF @ 15V

Kraft - Maks : 3.1W, 2.6W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-SMD, Flat Lead

Leverandørenhetspakke : 1206-8 ChipFET™

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SI551 , SI5511D

dokumenter for SI5511DC-T1-GE3

Dataark : SI5511DC-T1-GE3.pdf

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